6H-SiC金属-半导体-金属结构紫外光探测器的模拟与优化 |
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引用本文: | 陈斌,杨银堂,李跃进,刘红霞.6H-SiC金属-半导体-金属结构紫外光探测器的模拟与优化[J].半导体学报,2010,31(6):064010-5. |
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作者姓名: | 陈斌 杨银堂 李跃进 刘红霞 |
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作者单位: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China |
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摘 要: | 基于热电子发射理论,使用器件仿真软件ISE-TCAD建立了6H-SiC MSM紫外光探测器器件模型。对金属叉指宽度和间距均为3μm的器件进行了仿真,结果表明该结构探测器在10V偏压下暗电流已经达到15pA。器件的光电流比暗电流大2个数量级。通过仿真研究了不同结构对器件暗电流和光电流的影响并优化了器件结构。结果表明电极宽度为6μm电极,间距为3μm的器件达到最大光电流5.3nA。电极宽度为3μm,电极间距为6μm的器件具有最高的紫外可见比其比值为327。
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关 键 词: | MSM结构 紫外光探测器 肖特基接触 I-V特性 |
收稿时间: | 9/15/2009 3:31:06 PM |
修稿时间: | 1/22/2010 4:30:55 PM |
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