| 浮空层结构的分析 |
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| 引用本文： | 段宝兴,黄勇光,张波,李肇基.浮空层结构的分析[J].半导体学报,2007,28(8):1262-1266. |
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| 作者姓名： | 段宝兴 黄勇光 张波 李肇基 |
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| 作者单位： | 电子薄膜与集成器件国家重点实验室，电子科技大学，成都 610054;电子薄膜与集成器件国家重点实验室，电子科技大学，成都 610054;电子薄膜与集成器件国家重点实验室，电子科技大学，成都 610054;电子薄膜与集成器件国家重点实验室，电子科技大学，成都 610054 |
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| 摘 要： | 分析了REBULF LDMOS的实验结果，由击穿电压的测试结果验证了模拟仿真中发现的漏电流增加源于n+浮空层的作用，但暴露于表面的n+p结的漏电流使击穿电压降低. 为了解决这个问题，文中分析了具有部分n+浮空层的REBULF LDMOS结构，此结构不但具有降低体内电场的REBULF效应，而且终止于源端体内的n+p结解决了文献［10］中的大漏电流问题. 分析结果表明，击穿电压较一般RESURF LDMOS结构提高60%以上.
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| 关 键 词： | LDMOS n+浮空层 REBULF效应 击穿电压 |
| 文章编号： | 0253-4177（2007）08-1262-05 |
| 收稿时间： | 1/17/2007 3:15:20 PM |
| 修稿时间： | 3/10/2007 5:09:16 PM |
Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure |
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| Duan Baoxing,Huang Yongguang,Zhang Bo and Li Zhaoji.Experiment Results of REBULF LDMOS and Analysis of a Partial n+-Floating Structure[J].Chinese Journal of Semiconductors,2007,28(8):1262-1266. |
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| Authors: | Duan Baoxing Huang Yongguang Zhang Bo and Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China |
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| Abstract: | The results of an experiment on REBULF LDMOS are analyzed.The increased leakage current is due to the n -floating layer,as proved by the test results of breakdown voltage.However,the breakdown voltage decreases as a result of the leakage current of the n p junction being exposed to the surface.In order to resolve this problem,a REBULF LDMOS with a partial n -floating layer is proposed for the first time.An effective REBULF is obtained using this structure,and the large leakage current of Ref.10] is eliminated by an inner n p junction around the source.The results show that the breakdown voltage is increased by 60% in comparison with traditional RESURF LDMOS. |
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| Keywords: | LDMOS n+-floating layer effect of REBULF breakdown voltage |
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