Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211) |
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Authors: | Giacomo Badano Xavier Baudry Philippe Ballet Philippe Duvaut Alain Million Eric Micoud Sabeur Kaismoune Paul Fougères Sophie Mibord Pierre Tran-Van Arnaud Etcheberry |
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Affiliation: | (1) CEA LETI-Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;(2) Sofradir, Veurey-Voroize, France;(3) IREM, Université de Versailles, 45 Blvd. des Etats-Unis, 78035 St.␣Quentin-en-Yvelines, France |
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Abstract: | We characterize the surface of molecular-beam epitaxy (MBE)-grown CdTe(211)B/Ge(211) by atomic-force microscopy (AFM), optical interference microscopy, and generalized ellipsometry (GE). We find that, for substrate temperatures above 300°C, the surface is rough and hazy; the AFM root-mean-square roughness is of the order of 150 Å. It appears from GE that the optical response is anisotropic, the principal axes of anisotropy being along the $ [overline{1} 11] We characterize the surface of molecular-beam epitaxy (MBE)-grown CdTe(211)B/Ge(211) by atomic-force microscopy (AFM), optical interference microscopy, and generalized ellipsometry (GE). We find that, for substrate temperatures above 300°C, the surface is rough and hazy; the AFM root-mean-square roughness is of the order of 150 ?. It appears from GE that the optical response is anisotropic, the principal axes of anisotropy being along the and directions. For a substrate temperature of approximately 300°C, the surface is smooth and mirror-like and the AFM roughness is as low as 45 ?. The sample is still anisotropic, even though the magnitude of the cross-polarized reflection coefficients are very small in this case. It appears that the anisotropy originates from the surface roughness, not the bulk. |
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Keywords: | Molecular-beam epitaxy surface roughness generalized ellipsometry CdTe |
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