| 中文题目：考虑共面波导电容的AlGaN/GaN HEMTs小信号建模研究 |
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| 引用本文： | 杜江锋,徐鹏,王康,尹成功,刘洋,冯志红,敦少博,于奇.中文题目：考虑共面波导电容的AlGaN/GaN HEMTs小信号建模研究[J].半导体学报,2015,36(3):034009-4. |
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| 作者姓名： | 杜江锋 徐鹏 王康 尹成功 刘洋 冯志红 敦少博 于奇 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute |
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| 基金项目： | 国家自然科学基金(61376078), 国家自然科学基金(61274086), 中央高校基本科研业务费(ZYGX2012J041) |
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| 摘 要： | Given the coplanar waveguide(CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.
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| 关 键 词： | AlGaN/GaN HEMT coplanar waveguide effect modeling small signal S-parameters |
Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances |
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| Du Jiangfeng,Xu Peng,Wang Kang,Yin Chenggong,Liu Yang,Feng Zhihong,Dun Shaobo and Yu Qi.Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances[J].Chinese Journal of Semiconductors,2015,36(3):034009-4. |
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| Authors: | Du Jiangfeng Xu Peng Wang Kang Yin Chenggong Liu Yang Feng Zhihong Dun Shaobo and Yu Qi |
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| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model. |
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| Keywords: | AlGaN/GaN HEMT coplanar waveguide effect modeling small signal S-parameters |
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