磁控溅射制备ZnO缓冲层薄膜的微观结构和光学性能

研究了衬底温度、溅射气压对磁控溅射沉积ZnO缓冲层薄膜的微观结构、表面形貌和光学性能的影响。结果表明,衬底温度、溅射气压对ZnO缓冲层薄膜表面形貌、晶粒尺寸、禁带宽度和光学透过率等有较大影响。综合分析得出最佳的制备ZnO缓冲层薄膜的工艺为250℃、0.6 Pa。在此工艺下制备的ZnO缓冲层薄膜具有很好的ZnO(002)面c轴择优取向,结构致密、尺寸均匀,禁带宽度为3.24 eV,可见光平均透过率为86.93%,符合作CIGS太阳能电池缓冲层的要求。

Microstructure and Optical Properties of ZnO Thin Film Buffer Layer Deposited by Magnetron Sputtering

The influences of substrate temperature and sputtering pressure on microstructure and optical properties of ZnO thin film buffer layer deposited by magnetron sputtering were investigated. The results show that the substrate temperature and the sputtering pressure have a great effect on the surface morphology, average grain size, forbidden band width and optical transmittance of ZnO buffer layer. Through the comprehensive analysis, it is concluded that the optimal ZnO buffer layer film can be deposited at substrate temperature of 250 oC and sputtering pressure of 0.6 Pa. Under this technical condition, ZnO buffer layer film presents well (002) preferred orientation in c axis, compact and uniform structure with the forbidden band width of 3.24 eV and average visible light transmittance of 86.93%, satisfying the requirement of the buffer layer of CIGS solar cell