Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs |
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作者姓名: | Kanjalochan Jen Raghunandan Swain T. R. Lenka |
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作者单位: | Department of Electronics and Communication Engineering, National Institute of Technology Silchar |
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摘 要: | A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AlInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. Al N/GaN and AlInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/ m2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.
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关 键 词: | 2DEG GaN MOSHEMT quantum capacitance TCAD |
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