| 高介电常数栅介质/二氧化硅界面偶极子成因研究 |
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| 引用本文： | 韩锴,王晓磊,杨红,王文武.高介电常数栅介质/二氧化硅界面偶极子成因研究[J].半导体学报,2015,36(3):036004-3. |
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| 作者姓名： | 韩锴 王晓磊 杨红 王文武 |
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| 作者单位： | Department of Physics and Electronic Science, Weifang University;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(No.61404093);the Doctoral Scientific Research Foundation of Weifang University(No.2014BS02) |
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| 摘 要： | The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states(DCIGS). The charge neutrality level(CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k/SiO2 systems based on this model are in good agreement with the experimental data.
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| 关 键 词： | high-k dielectric band alignment interface dipole |
Electric dipole formation at high-k dielectric/SiO2 interface |
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| Han Kai,Wang Xiaolei,Yang Hong and Wang Wenwu.Electric dipole formation at high-k dielectric/SiO2 interface[J].Chinese Journal of Semiconductors,2015,36(3):036004-3. |
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| Authors: | Han Kai Wang Xiaolei Yang Hong and Wang Wenwu |
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| Affiliation: | Department of Physics and Electronic Science, Weifang University, Weifang 261061, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academyof Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academyof Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academyof Sciences, Beijing 100029, China |
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| Abstract: | The formation of an electric dipole at the high-k/SiO2 interface is quantitatively analyzed. The band lineups and physical origin of dipole formation at the high-k/SiO2 interface are explained by the dielectric contact induced gap states (DCIGS). The charge neutrality level (CNL) of the DCIGS, which represents a distribution of high-k and SiO2 contact induced gap states, is utilized to study the dipole moment. The charge transfer due to different CNLs of high-k and SiO2 is considered as the dominant origin of dipole formation. The theoretically calculated dipole strengths of high-k/SiO2 systems based on this model are in good agreement with the experimental data. |
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| Keywords: | high-k dielectric band alignment interface dipole |
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