|
|||||
|
|
Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric |
|
| Authors: | Zhu Shuyan Xu Jingping Wang Lisheng Huang Yuan Tang Wing Man |
| Affiliation: | 1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China ;Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China;3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China |
| Abstract: | |
| Keywords: | GaAs MOS devices interface passivation layer (IPL) high-k dielectric |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |