Constrained Sintering of Silver Circuit Paste

Densification kinetics and stress development during constrained sintering of a silver film on a rigid silicon substrate have been studied. Compared with free sintering, the sintering of constrained silver film exhibits a much lower densification and slower densification kinetics. The densification-controlled mechanism changes from fast grain-boundary diffusion kinetics for free sintering to slow lattice diffusion kinetics for constrained sintering. The in-plane tensile stress developed during constrained sintering of silver film, measured using a noncontact laser-scanning optical system, increases rapidly to a maximum level of 1.0–1.5 MPa initially, gradually decreases, and then becomes constant at 0.8–1.0 MPa. The maximum stress observed increases with increasing sintering temperature as a result of the faster densification rate. It is believed that the retardation of densification kinetics of constrained silver film is caused by a change in densification mechanism and the existence of in-plane tensile stress.