A simple route for synthesis of a bi-epitaxial junction in thin films of YBa2Cu3O7 − x |
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| Authors: | P. Kuppusami V. S. Raghunathan A. G. Vedheswar |
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| Affiliation: | (1) Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, 603 102 Kalpakkam, Tamil Nadu, India;(2) Present address: Department of Physics and Astrophysics, University of Delhi, 110 007 Delhi, India |
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| Abstract: | A two-step fabrication process for the creation of a bi-epitaxial junction in thin films of YBa2Cu3O7 – x is described. The junction has been fabricated on (100) SrTiO3 substrate using a buffer layer of CeO2. Polarized light optical microscopy indicates a regular basket-weave microstructure and a granular structure on either side of the junction. The junction shows Josephson critical currents at temperatures upto 74 K and the critical current increases linearly with decreasing temperature. |
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