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Near Room‐Temperature Memory Devices Based on Hybrid Spin‐Crossover@SiO2 Nanoparticles Coupled to Single‐Layer Graphene Nanoelectrodes
Authors:Anastasia Holovchenko  Julien Dugay  Mónica Giménez‐Marqués  Ramón Torres‐Cavanillas  Eugenio Coronado  Herre S. J. van der Zant
Affiliation:1. Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands;2. Instituto de Ciencia Molecular, Unversidad de Valencia, Paterna, Spain
Abstract:
Keywords:bistability  graphene  molecular electronics  molecular spintronics  nanoparticles  spin‐crossover
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