| 流量对高速沉积的微晶硅电池性能的影响 |
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| 引用本文： | 郭群超,韩晓艳,孙建,魏长春,王辉,陈飞,张晓丹,赵颖,耿新华.流量对高速沉积的微晶硅电池性能的影响[J].光电子．激光,2007,18(9):1017-1021. |
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| 作者姓名： | 郭群超 韩晓艳 孙建 魏长春 王辉 陈飞 张晓丹 赵颖 耿新华 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室,天津,300071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术研究微晶硅(μc-Si)薄膜的高速沉积过程发现:分别采用100和500 sccm流量制备本征μc-Si材料,将其应用在μc-Si电池i层,电池的电流-电压(I-V)特性有明显的差异.通过微区Raman、原子力显微镜(AFM)和X射线衍射(XRD)测试发现:尽管μc-Si薄膜的晶化率相似,但是小流量情况下制备的薄膜具有较厚的非晶孵化层,晶粒尺寸不一;大流量下制备的材料沿生长方向的纵向均匀性相对较好,晶粒尺寸较小、分布均匀,而且具有〈220〉晶相峰强度高于〈111〉和〈311〉晶相峰强度的特点.因此得出:在高压高速沉积μc-Si薄膜过程中,反应气体流量对μc-Si的纵向结构有很大影响,选择适合的反应气流量能够调节适宜的气体滞留时间,从而减小薄膜的纵向不均匀性.
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| 关 键 词： | 反应气体流量 高速沉积 微晶硅(μc-Si)太阳电池 超高频 |
| 文章编号： | 1005-0086（2007）09-1017-05 |
| 收稿时间： | 2006/10/13 0:00:00 |
| 修稿时间： | 2006-10-132006-12-12 |
Influence of Total Gas Flow Rate on the Characters of High Rate Deposited Microcrystalline Silicon Solar Cells |
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| GUO Qun-chao,HAN Xiao-yan,SUN Jian,WEI Chang-chun,WANG Hui,CHEN Fei,ZHANG Xiao-dan,ZHAO Ying,GENG Xin-hua.Influence of Total Gas Flow Rate on the Characters of High Rate Deposited Microcrystalline Silicon Solar Cells[J].Journal of Optoelectronics·laser,2007,18(9):1017-1021. |
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| Authors: | GUO Qun-chao HAN Xiao-yan SUN Jian WEI Chang-chun WANG Hui CHEN Fei ZHANG Xiao-dan ZHAO Ying GENG Xin-hua |
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| Affiliation: | Institute of Photoelectronics Thin Film Devices and Technique ,Key Laboratory of Photoelectronics Thin Film Devices and Technique of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of EMC, Nankai University Tianjin 300071 ,China |
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| Abstract: | It is found in the high rate deposition microcrystalline silicon solar cells by very-high-frequency plasma-enhanced chemical vapor(VHF-PECVD) that the performances of the two solar cells which use the intrinsic microcrystalline deposited at two different total gas flow rate of 100 sccm and 500 sccm as their i-layers are obviously different.From the measurements of micro-Raman scope,atomic force microscope and X-ray diffraction,the results show that there is a thick amorphous silicon incubation layer at the ... |
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| Keywords: | total gas flow rate high rate deposition microcrystalline silicon solar cells very high frequency |
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