Properties of Gallium Phosphide Thick Films Prepared on Zinc Sulfide Substrates by Radio-Frequency Magnetron Sputtering |
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Authors: | Yangping Li Zhengtang Liu School of Materials Science Engineering Northwestern Polytechnical University Xi an China |
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Affiliation: | Yangping Li , Zhengtang Liu School of Materials Science , Engineering,Northwestern Polytechnical University,Xi an 710072,China |
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Abstract: | Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick films on zinc sulfide (ZnS) substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared (IR) transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the ... |
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Keywords: | Radio-frequency magnetron sputtering Gallium phosphide Thick film Infrared transmission |
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