Evolution of TiOx-SiOx nano-composite during annealing of ultrathin titanium oxide films on Si substrate |
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| Affiliation: | 1. Laboratório de Optoeletrônica e Filmes Finos, Departamento de Fìsica, Faculdade de Ciências e Tecnologia, UNESP, Rua Roberto Simonsen, 305, Presidente Prudente, SP, 19060-900, Brazil;2. Laboratório de Materiais Híbridos, Departamento de Ciências Exatas e da Terra, Universidade Federal de São Paulo, UNIFESP, Rua São Nicolau, 210, Diadema, SP, 09913-030, Brazil;1. School of Physical Science and Technology, Yunnan University, Kunming 650091, People?s Republic of China;2. Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650091, People?s Republic of China;3. Yunnan Key Laboratory of Micro/Nano Materials & Technology, Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, People?s Republic of China;1. Faculty of Physics, Hanoi University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam;2. Nano and Energy Center, Hanoi University of Science, Vietnam National University, Hanoi, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam;1. Laboratório de Tecnologia em Materiais Fotônicos e Optoeletrônicos, Faculdade de Tecnologia de São Paulo, São Paulo, Brazil;2. Physics Department, Faculty of Science, University of Tabuk, Tabuk, 47512, Saudi Arabia;3. Physics Department, Faculty of Science, Al-Azhar University, Assiut, 71524, Egypt;4. Departamento de Engenharia Elétrica, Escola Politécnica da Universidade de São Paulo, São Paulo, Brazil;5. Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia;6. Medical Diagnostic Imaging Department, College of Health Sciences, University of Sharjah, Sharjah, 27272, United Arab Emirates;7. Istinye University, Faculty of Engineering and Natural Sciences, Computer Engineering Department, Istanbul, 34396, Turkey |
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| Abstract: | This paper discusses the formation of the TiOx-SiOx nano-composite phase during annealing of ultrathin titanium oxide films (~27 nm). The amorphous titanium oxide films are deposited on silicon substrates by sputtering. These films are important for high-k dielectrics and sensing applications. Annealing of these films at 750 °C in the O2 environment (for 15–60 min) resulted in the polycrystalline rutile phase. The films exhibit Raman peaks at 150 cm?1 (B1g), 435 cm?1 (Eg), and 615 cm?1 (A1g) confirming the rutile phase. The signature TO (1078 cm?1) and LO (1259 cm?1) infrared active vibrational modes of Si–O–Si bond confirms the presence of silicon-oxide. The X-ray photoelectron spectra of the TiOx films show multiple peaks corresponding to Ti metal (453.8 eV); Ti4+ state (458.3 eV (Ti 2p3/2) and 464 eV (Ti 2p1/2)); and Ti3+ state (456.4 eV (Ti 2p3/2) and 460.8 eV (Ti 2p1/2)). The O1s XPS spectra peaks at 530–533 eV can be attributed to Ti–O and Si–O bonds of the TiOx-SiOx nano-composite phase in the annealed films. The depth profiling XPS study shows that the top surface of the annealed film is mainly TiOx and the amount of SiOx increases with the depth. |
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| Keywords: | Ultrathin films Raman spectra X-ray photoelectron spectroscopy |
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