| Abstract: | In this article, a new extraction technique is proposed to extract the small‐signal parameters of gallium nitride (GaN) high electron mobility transistors (HEMTs) on three different substrates namely, Si, SiC, and Diamond. This extraction technique used a single small‐signal circuit model to efficiently describe the physical and electrical properties of GaN on different substrates. This technique takes into account any asymmetry between the gate‐source and gate‐drain capacitances on the asymmetrical GaN HEMT structure, charge‐trapping effects, passivation layer inclusion, as well as leakage currents associated with the nucleation layer between the GaN buffer layer and the different substrates. The extracted values were then optimized using the grey wolf optimizer. The proposed technique was demonstrated through a close agreement between simulated and measured S‐parameters. |
