Edge luminescence of single-crystal silicon modulated by voltage variation on the p-n junction

The output power and quantum efficiency of the room-temperature quasi-stationary edge photoluminescence (PL) in a single-crystal silicon structure cut from a high-efficiency solar cell have been studied as functions of the power of exciting laser radiation with a wavelength of 658 nm at variable direct current and reverse-bias voltage on the p-n junction. It was found that the direct current passage led to a significant increase in the output power and quantum efficiency of the quasi-stationary PL and a decrease in the threshold power of PL excitation. The application of a reverse bias voltage produced the opposite effects. Possible physical factors responsible for these phenomena are considered.