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一种FLASH存储单元的结构及功能分析
引用本文:刘寅,朱钧.一种FLASH存储单元的结构及功能分析[J].微电子学,1998,28(1):32-35.
作者姓名:刘寅  朱钧
作者单位:清华大学微电子学研究所
摘    要:讨论了一种新颖的不挥发存储器单元-FLASH的结构描述及器件模拟,对实验单元进行了测试,采用了分离电压的方法进行擦操作并进行分析。这种单元占用芯片面积小,很有发展前景。

关 键 词:存储器  数字电路  FLASH单元  EEPROM

A Functional and Structural Analysis of a Novel FLASH Cell
LIU Yin and ZHU JunInstitute of Microelectronics,Tsinghua University,Beijing.A Functional and Structural Analysis of a Novel FLASH Cell[J].Microelectronics,1998,28(1):32-35.
Authors:LIU Yin and ZHU JunInstitute of Microelectronics  Tsinghua University  Beijing
Affiliation:LIU Yin and ZHU JunInstitute of Microelectronics,Tsinghua University,Beijing 100084
Abstract:A novel non volatile memory cell,flash device,is discussed.The structure of the device and its simulation are described.Experiments on the device were conducted and results are analyzed.Split voltage method is used to erase the device.
Keywords:Memory    Digital  IC    FLASH  cell    EEPROM    Process  simulation    Device  simulation  
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