Improvement of AlGaInP light emitting diode by sulfide passivation |
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| Authors: | YK Su HC Wang CL Lin WB Chen SM Chen |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taman, Taiwan; |
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| Abstract: | The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. |
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