Fabrication of electroabsorption optical modulators using laserdisordered GaInAs/GaInAsP multiquantum well structures |
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| Authors: | Lullo G McKee A McLean CJ Bryce AC Button C Marsh JH |
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| Affiliation: | Dept. of Electron. & Electr. Eng., Glasgow Univ.; |
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| Abstract: | Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20 dB have been obtained in material which has been bandgap blue shifted by as much as 120 nm, while samples shifted by 80 nm gave depths as high as 27 dB |
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