Low threshold room temperature pulsed and -57°C CW operationsof 1.3 μm GaInAsP/InP circular planar buried heterostructuresurface-emitting lasers |
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| Authors: | Baba T. Suzuki K. Yogo Y. Iga K. Koyama F. |
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| Affiliation: | Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama; |
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| Abstract: | Room temperature pulsed lasing operation of a 1.3-μm GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO2/Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12-μm-diameter active region was 34 mA at 24°C under pulsed operation. The optimized window cap structure reduces the series resistance to 6~15 Ω. Continuous wave lasing was also obtained up to -57°C, and the threshold below -61°C was still lower than 22 mA |
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