| 溅射工艺参数对BST薄膜介电常数的影响 |
| |
| 引用本文： | 林明通,肖田,楼均辉,陈国荣,杨云霞.溅射工艺参数对BST薄膜介电常数的影响[J].电子元件与材料,2005,24(7):58-60. |
| |
| 作者姓名： | 林明通 肖田 楼均辉 陈国荣 杨云霞 |
| |
| 作者单位： | 上海广电电子股份有限公司平板中心,上海,200081;华东理工大学材料科学与工程学院,上海,200237;上海广电电子股份有限公司平板中心,上海,200081;华东理工大学材料科学与工程学院,上海,200237 |
| |
| 摘 要： | 采用射频磁控溅射法在ITO玻璃基片上制备了约700nm的Ba0.5Sr0.5Ti03(BST)薄膜。研究了溅射功率、气压、ψO2/(Ar+O2)]比和基片温度对εr的影响,获得各种溅射条件下的薄膜的εr为250~310。提出了较优的工艺,即本底真空1.5×10–3Pa、靶基距6.2cm、功率300W、气压1.8Pa、ψO2/(Ar+O2)]为30%和衬底温度500℃,并研究了薄膜的晶相、组成和形貌。
|
| 关 键 词： | 无机非金属材料 射频磁控溅射 BST薄膜 沉积速率 介电常数 |
| 文章编号： | 1001-2028(2005)07-0058-03 |
Effect of Sputtering Processes on Dielectric Constants of BST Thin Films |
| |
| LIN Ming-tong,Xiao Tian,LOU Jun-hui,CHEN Guo-rong,YANG Yun-xia.Effect of Sputtering Processes on Dielectric Constants of BST Thin Films[J].Electronic Components & Materials,2005,24(7):58-60. |
| |
| Authors: | LIN Ming-tong Xiao Tian LOU Jun-hui CHEN Guo-rong YANG Yun-xia |
| |
| Abstract: | Ba0.5Sr0.5TiO3(BST)thin films about 700 nm in thickness were prepared by rf magnetron sputtering on ITO-coated glass substrate. The influence of sputtering power, gas pressure, ψO2/(Ar+O2)] ratio,and substrate temperature on dielectric constant of the BST thin films was investigated. The dielectric constants under various deposition parameters are between 250~310. The base pressure of 10–3 Pa, substrate-target distance of 6.2 cm, sputtering power of 300 watts, gas pressure of 1.8 Pa, ψO2/(Ar+O2)] ratio of 30% and substrate temperature of 500℃ are identified to be a better sputtering process. The crystallinity, composition as well as morphology of the BST film deposited under the better condition was also studied. |
| |
| Keywords: | inorganic non-metallic materials rf magnetron sputtering BST thin films dielectric constant |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
