| Conductive Properties of Electron Beam Evaporated a-Si_(1-x) Gd_x Films |
| |
| 引用本文： | 甘润今,张津燕. Conductive Properties of Electron Beam Evaporated a-Si_(1-x) Gd_x Films[J]. 中国稀土学报(英文版), 1993, 0(3) |
| |
| 作者姓名： | 甘润今 张津燕 |
| |
| 作者单位： | Department of Physics Lanzhou University，Lanzhou 730000，China，Department of Physics，Lanzhou University，Lanzhou 730000，China |
| |
| 摘 要： | The properties of temperature dependence of conductivity σ of electron beam evaporateda-Si_(1-x)Gd_x films which was deposited on some substrates of glass and Al-foil at a substrate temperature ofapproximately 300℃ in a background pressure about 2×10~(-4) Pa with a deposition speed about 0.2 nm/swas analyzed and studied.The forms of Gd~(3+) ions in the films,the dangling bond compensation achieved byGd~(3+) ions and the impurity states compensation achieved by structural disorder aroused by doping Gd ele-ment into a-Si film could be the key factors in resolving the properties of conduction in a-Si_(1-x)Gd_x films.Inthe temperature region of 290 K
|
Conductive Properties of Electron Beam Evaporated a-Si_(1-x) Gd_x Films |
| |
| Gan Run-Jin Zhang Jin-Yan. Conductive Properties of Electron Beam Evaporated a-Si_(1-x) Gd_x Films[J]. Journal of Rare Earths, 1993, 0(3) |
| |
| Authors: | Gan Run-Jin Zhang Jin-Yan |
| |
| Abstract: | |
| |
| Keywords: | Conductivity Rare earth a-Si film Dangling bond |
| 本文献已被 CNKI 等数据库收录！ |
