Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition |
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Authors: | N LiWL Li SQ ZhangWD Fei |
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Affiliation: | Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin 150001, P.R. China |
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Abstract: | K0.5Na0.5NbO3 thin films were prepared on Pt/Ti/SiO2/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed. |
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Keywords: | K0 5Na0 5NbO3 Thin films Post-annealing Dielectric properties |
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