工艺参数对EB-PVD制备YSZ涂层的影响

为探讨电子束物理气相沉积(EB-PVD)制备8 mol.%氧化钇稳定氧化锆(8YSZ)涂层过程中工艺参数对涂层致密性、表面粗糙度和晶粒择优取向生长的影响,利用扫描电镜、原子力显微镜和X射线衍射技术对涂层的上述性能进行了分析.分析结果表明,随沉积速率由750 nm/min下降至20 nm/min,YSZ涂层的晶粒逐渐聚合长大,晶粒之间的孔隙减少,涂层的气体扩散系数相应地由2.41×10-4cm4/(N·s)下降至6.56×10-5cm4/(N·s).YSZ涂层的表面粗糙度随靶基距的提高逐渐降低,涂层的晶体学取向随蒸汽粒子入射角的改变而改变,入射角为30°时(111)晶面具有平行于涂层表面排列的趋势,入射角为45°时(311)和(420)晶面具有平行于表面排列的趋势,而入射角为60°时(220)和(331)晶面具有平行于表面排列的趋势.

Effects of process parameters on YSZ coatings prepared by EB-PVD

To explore the effects of process parameters on 8YSZ (ZrO₂ stabilized by 8mol.% Y₂O₃) coatings prepared by electron beam physical vapor deposition(EB-PVD),the coatings were prepared and their properties,such as density,surface roughness,preferred orientation were analyzed by means of SEM,AFM and XRD respectively.The analysis results showed that the crystal grains aggregated and the pores reduced as the deposition rate decreased from 750nm/min to 20nm/min.At the same time,the coefficient of gas permeation of the coatings dropped from 2.41×10-4cm⁴/(N·s) at deposition rate of 750nm/min to 2.41×10-4cm⁴/(N·s)at deposition rate of 20nm/min.The surface roughness of YSZ coatings reduced as the distance between evaporation source and substrate increased.The crystal orientation of the coatings changed with the angle variation of incoming evaporation particles.When the angle was 30°,the crystal plane of (111) was inclined to parallel to coating surface.The crystal planes of (311) and (420) at an incoming angle of 45° as well as the crystal planes of (220) and (331) at an incoming angle of 45° were inclined to parallel to coating surface.