| PECVD法生长的nc－Si：H膜电导率的研究 |
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| 引用本文： | 韦亚一,郑国珍,何宇亮.PECVD法生长的nc－Si：H膜电导率的研究[J].功能材料,1994(6). |
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| 作者姓名： | 韦亚一 郑国珍 何宇亮 |
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| 作者单位： | 上海技术物理研究所红外物理国家实验室，南京大学物理系及固体微结构国家实验室 |
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| 摘 要： | 使用ＰＥＣＶＤ方法生长了ｎｃ－Ｓｉ：Ｈ膜，Ｘ射线衍射、Ｒａｍａｎ光谱和电镜观测表明样品具备了纳米结构特征。测量了样品在７７Ｋ～４００Ｋ温度范围的电导率，并使用二相随机分布有效介质理论，计算了ｎｃ－Ｓｉ：Ｈ膜中晶粒部分和晶界部分的电导率。对计算结果进行了理论分析，初步探讨了ｎｃ－Ｓｉ结构对其导电性能的影响，提出ｎｃ－Ｓｉ：Ｈ的高电导率来源于膜中纳米晶粒的小尺寸效应。
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| 关 键 词： | nc－Si：H膜，有效介质理论，电导率 |
Study on Conductivities of nc-Si:H Films |
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| Wei Yayi, Zhen Guozhen, He Yuliang.Study on Conductivities of nc-Si:H Films[J].Journal of Functional Materials,1994(6). |
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| Authors: | Wei Yayi Zhen Guozhen He Yuliang |
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| Abstract: | Using PECVD method,we fabricatednanometer crystalline Si:H(nc-Si:H)films.X-raydiffraction,Raman spectroscopy and electronmicroscopy have been used to detect the structureparameters. Conductivities of the samples atdifferent temperatures from 77K to 400K have beenmeasured. Based on experimental data,we usedeffective-medium theory to calculate theconductivities of nano-crystalline and interface innc-Si:H films. According to calculation results,wesuggest that the high conductivity of nc-Si:H comefrom the crystallite in nc-Si:H films,and this maybe a kind of small size effect. |
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| Keywords: | nc-Si:H films effective-mediumtheory electric conductivity |
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