a ELOP Electrooptics Industries Ltd. P.O. Box 1165, Rehovot 76100, Israel
b Faculty of Engineering, Department of Physical Electronics, Tel-Aviv University, Tel-Aviv, Israel
Abstract:
HfO2 thin films were deposited using e-beam gun evaporation with ion assisted deposition (IAD) of low energy oxygen ions (40–100 eV) from an end-Hall ion source. A comparison was made using Hf and HfO2 starting materials. The index of refraction was measured as a function of the ion source voltage and compared to results without IAD. Application to high power laser mirrors was verified by measurements of laser damage thresholds at 1.06 μm.