High-performance solution-processed polymer space-charge-limited transistor |
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| Affiliation: | 1. Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;2. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC;3. The Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan, ROC |
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| Abstract: | We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2. |
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