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Picosecond carrier dynamics induced by coupling of wavefunctions in a Si-nanodisk array fabricated by neutral beam etching using bio-nano-templates
Authors:Takayuki Kiba  Yoshiya Mizushima  Makoto Igarashi  Seiji Samukawa  Akihiro Murayama
Affiliation:1.Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo, 060-0814, Japan;2.Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan;3.Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda, Tokyo, 102-0075, Japan
Abstract:The picosecond carrier dynamics in a closely packed Si-nanodisk (Si-ND) array with ultrathin potential barrier fabricated by neutral beam etching using bio-nano-templates was investigated by time-resolved photoluminescence (PL). The PL decay curves were analyzed as a function of photon energy by the global fitting method. We show three spectral components with different decay times, where the systematic energy differences of the spectral peaks are clarified: 2.03 eV for the fastest decaying component with a decay time τ = 40 ps, 2.02 eV for τ = 300 ps, and 2.00 eV for τ = 1.6 ns. These energy separations ranging from 10 to 30 meV among the emissive states can be attributed to the coupling of wavefunctions of carriers between neighboring NDs.
Keywords:neutral beam etching   silicon nanostructures   bio-nano-templates   time-resolved photoluminescence   carrier dynamics
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