Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices |
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Affiliation: | 1. Department of Electrical Engineering, Princeton University, E-Quad, Olden Street, Princeton, NJ 08544, USA;2. Department of Chemistry and Biochemistry, The Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332, USA |
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Abstract: | n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current–voltage (I–V) measurements, which show a 106-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p–i–n CuPc homojunction is also fabricated using F4-TCNQ and DMC as p- and n-dopants, respectively. Current–voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance–voltage (C–V) measurements. |
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