| Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing |
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| 作者姓名： | 彭菊村 |
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| 作者单位： | Department of |
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| 摘 要： | A method of QWI ( quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N2 flue, the blue shift ofphotoluminescence (PL) peak related to implanted dose: 1 × 1011 , 1 × 1012, 1 × 1013 ,3 × 1013 , 7 × 1013 ion/ cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However , SiO2 film also may promote the quantum well intermixing.
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| 关 键 词： | 等离子增强 化学蒸汽沉积 量子阱混合 P离子培植 复合材料 |
| 收稿时间： | 2005-04-15 |
| 修稿时间： | 2006-05-03 |
Plasma-enhanced chemical vapordeposition SiO2 film after ion implantation induces quantum well intermixing |
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| Peng Jucun,Wu Boying,Chen Jie,Zhao Jie,Wang Yongchen.Plasma-enhanced Chemical Vapordeposition SiO2 Film after Ion Implantation Induces Quantum Well Intermixing[J].Journal of Wuhan University of Technology. Materials Science Edition,2006,21(4):105-107. |
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| Authors: | Peng Jucun Wu Boying Chen Jie Zhao Jie Wang Yongchen |
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| Affiliation: | (1) Department of Physics, Xiaogan University, 432100 Xiaogan, China;(2) Department of Physics, Tianjin Normal University, 300074 Tianjin, China |
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| Abstract: | A method of QWI (quantum well intermixing) realizing through plasma-enhanced chemical vapordeposition (PECVD) SiO2 film following ion implantation was investigated. PECVD 200 nm SiO2 film after 160 keV phosphorus (P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural
intermixing, annealing process was carried out at 780°C for 30 seconds under N2 flue, the blue shift of photoluminescence (PL) peak related to implanted dose: 1×1011 1×1012, 1×1013, 3×1013, 7×1013 ion/cm2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak
with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects
in the implanting layers generated by ion implantation are much more than those in SiO2 film. So, the blue shift results mainly from ion implantation. However, SiO2 film also may promote the quantum well intermixing.
Funded by the National Natural Science Foundation of China(No. 60276013) |
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| Keywords: | quantum well intermixing P ion implantation PECVD SiO2 PL blue shift |
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