| 20V NLDMOS器件在关态雪崩击穿条件下的退化 |
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| 引用本文： | 张世锋,丁扣宝,韩雁,韩成功,胡佳贤,张斌.20V NLDMOS器件在关态雪崩击穿条件下的退化[J].半导体学报,2010,31(9):094006-4. |
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| 作者姓名： | 张世锋 丁扣宝 韩雁 韩成功 胡佳贤 张斌 |
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| 基金项目： | supported by the National Science ＆ Technology Major Project of China（No.2009ZX01033-001-003） |
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| 摘 要： | 对一种工作在关态雪崩击穿条件下的20V的NLDMOS器件的退化特性进行了研究。通过电流脉冲应力实验、TCAD软件仿真、以及电荷泵测试，提出了两种退化机制。第一种机制是N型漂移区中热空穴注入到氧化层中，在氧化层中形成固定正电荷；第二种机制是漂移区中界面态的增加引起的载流子迁移率下降。这两种机制都随着雪崩电流的增加而增强。
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| 关 键 词： | 雪崩击穿 降解行为 计算机辅助设计 器械 退化机制 接口状态 电流脉冲 TCAD |
Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices |
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| Zhang Shifeng,Ding Koubao,Han Yan,Han Chenggong,Hu Jiaxian and Zhang Bin.Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices[J].Chinese Journal of Semiconductors,2010,31(9):094006-4. |
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| Authors: | Zhang Shifeng Ding Koubao Han Yan Han Chenggong Hu Jiaxian and Zhang Bin |
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| Affiliation: | Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented. A constant current pulse stressing test is applied to the device. Two different degradation mechanisms are identified by analysis of electrical data, technology computer-aided design (TCAD) simulations and charge pumping measurements. The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region, and the second one is due to decreased electron mobility upon interface state formation in the drift region. Both of the mechanisms are enhanced with increasing avalanche breakdown current. |
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| Keywords: | NLDMOS avalanche breakdown degradation charge-pumping |
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