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In situ device processing using shadow mask selective area epitaxy and in situ metallization |
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| Authors: | Y. Luo L. Zeng W. Lin B. Yang M. C. Tamargo Y. M. Strzhemechny S. A. Schwarz |
| Affiliation: | (1) Department of Chemistry, City College of CUNY, Center for Advanced Technology on Photonic Materials and Applications, Center for Analysis of Structures and Interfaces, 10031 New York, NY;(2) the Graduate School and University Center of the City University of New York, 10031 New York, NY;(3) Department of Physics, Queens College of CUNY, 11367 Flushing, NY |
| Abstract: | A concept for in situ device processing has been demonstrated by the fabrication of Au/CdTe device like structures using shadow mask selective area epitaxy (SAE) and in situ metallization. Patterned CdTe epilayers were grown in the molecular beam epitaxy (MBE) chamber using shadow mask SAE (in situ patterning) and then directly transferred within ultrahigh vacuum (UHV) into a metal evaporation chamber for patterned Au deposition (in situ metallization). Excellent pattern definitions of both the CdTe and Au layers were obtained. Good metal adhesion properties and low levels of contamination at the metal-semiconductor interface were observed. A specially designed mask fixture that allows the mask to be placed and removed within the UHV chamber was implemented to perform this work. |
| Keywords: | Molecular beam epitaxy selective area epitaxy shadow mask in situ device processing Au/CdTe |
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