| GaAs／GaAlAs阴极粘结工艺的X射线双晶衍射测量 |
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| 引用本文： | 闫金良 向世明. GaAs／GaAlAs阴极粘结工艺的X射线双晶衍射测量[J]. 红外技术, 1998, 20(2): 33-37 |
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| 作者姓名： | 闫金良 向世明 |
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| 作者单位： | 西安应用光学研究所 |
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| 摘 要： | 分析了ＧａＡｓ／ＧａＡｌＡｓ阴极粘结工艺中应力产生的根源和晶体中应力对Ｘ射线双晶衍射峰的宽度和强度的影响。用Ｘ射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。
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| 关 键 词： | 砷化镓 阴极 玻璃 X射线双晶衍射 光电子学 |
Measurement of Glass-Bonded GaAs/GaAlAs Photocathode by X-Ray Double Crystal Diffractometry |
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| Yan Jinliang,Xiang Shiming. Measurement of Glass-Bonded GaAs/GaAlAs Photocathode by X-Ray Double Crystal Diffractometry[J]. Infrared Technology, 1998, 20(2): 33-37 |
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| Authors: | Yan Jinliang Xiang Shiming |
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| Abstract: | The sources of stresses caused by thermal bonding of GaAs/GaAlAs photocathode to glass and the influences of the crystal stresses on width and intensity of X-ray double crystal diffraction peak are analyzed.Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.The experimental results show that no evident extra strain is added by the process and the double crystal diffraction is due to the non-crystalinity of the glass window. |
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| Keywords: | GaAs photocathode X-ray double crystal diffration |
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