Etch characteristics of TiN/Al2O3 thin film by using a Cl2/Ar adaptive coupled plasma |
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Authors: | Jong-Chang Woo Seung-Han Kim Chang-Il Kim |
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Affiliation: | School of Electrical and Electronics Engineering, Chung-Ang University, 221 Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea |
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Abstract: | In this study, we carried out an investigation in the etching characteristics of TiN thin films in a C12/Ar adaptive coupled plasma. The maximum etch rate of the TiN thin films was 768 nm/min at a gas mixing ratio of C12 (75%)/Ar (25%). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface. Field emission Auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products. |
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Keywords: | Etching TiN Adaptive coupled plasma XPS AES |
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