Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films |
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Authors: | Liqiang GuoJianning Ding Jichang YangZhiyong Ling Guanggui ChengNingyi Yuan Shubo Wang |
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Affiliation: | a Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, China b Low-dimension Material Micro/Nano Device and System Center, Jiangsu Polytechnic University, Changzhou 213164, China c Key Laboratory of new energy engineering, Changzhou 213164, China |
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Abstract: | In this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B2H6) was a doping agent, and the flow ratio η of B2H6 component to silane (SiH4) was varied in the experimental. Films’ surface morphology was investigated with atomic force microscopy (AFM); Raman spectroscopy, X-ray diffraction (XRD) was performed to study the crystalline volume fraction Xc and crystalline size d in films. The electrical and optical properties were gained by Keithly 617 programmable electrometer and ultraviolet-visible (UV-vis) transmission spectra, respectively. It was found that: there are on the film surface many faulty grains, which formed spike-like clusters; increasing the flow ratio η, crystalline volume fraction Xc decreased from 40.4% to 32.0% and crystalline size d decreased from 4.7 to 2.7 nm; the optical band gap Egopt increased from 2.16 to 2.4 eV. The electrical properties of p-type nc-Si:H films are affected by annealing treatment and the reaction pressure. |
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Keywords: | Hydrogenated nanocrystalline silicon films Electrical and optical properties Solar cells |
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