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Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas |
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| Authors: | Y-H Ham A EfremovHW Lee SJ YunNK Min K-H BaekL-M Do K-H Kwon |
| Affiliation: | a Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, South Korea b Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia c Division of Electronic, Computer, and Communication Engineering, Hanseo University, Chungnam 356-706, South Korea d Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, South Korea |
| Abstract: | We investigated the etch characteristics and mechanisms of Ga-doped ZnO (Ga-ZnO) thin films in HBr/X (X = Ar, He, N2, O2) inductively-coupled plasmas. The etch rates of Ga-ZnO thin films were measured as a function of the additive gas fraction in the range of 0-100% for Ar, He, N2, and O2 at a fixed gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). The plasma chemistry was analyzed using a combination of the global (zero-dimensional) plasma model and Langmuir probe diagnostics. By comparing the behavior of the etch rate and fluxes of plasma active species, we found that the Ga-ZnO etch process was not limited by ion-surface interaction kinetics and appeared in the reaction rate-limited etch regime. In the HBr/O2 plasma, the etch kinetics were probably influenced by oxidation of the etched surface. |
| Keywords: | Ga-ZnO HBr-based plasma Etch rate Etch mechanism |
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