Control of the energy of ion flow affecting electrically insulated surface in plasma processing reactor based on a beam plasma discharge |
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Authors: | E.G. Shustin N.V. IsaevI.L. Klykov V.V. Peskov |
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Affiliation: | Fryazino branch, V.A. Kotelnikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences (RAS), Fryazino, Moscow reg., 141190, Vvedensky Pl. 1, Russia |
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Abstract: | We compare two ways to control the distribution function of ions on the isolated structure which is treated in a plasma reactor based on beam plasma discharge. In the first case, the periodic pulse voltage is applied to the substrate holder. The calculation of currents and voltages on the surface in contact with the plasma in a simple empirical model has been performed; the comparison of results of calculation and experiment is presented. In the latter case, the pulsed voltage is applied to the discharge collector, thus modulating the plasma potential. The comparison shows that the second method provides more efficient control of the distribution function of ions, acting on the treated substrate. |
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Keywords: | Plasma processing reactors Beam plasma discharge Ion distribution function Surface etching |
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