|
|||||
|
|
Investigation of optical and compositional properties of thin SiNx:H films with an enhanced growth rate by high frequency PECVD method |
|
| Authors: | Min-Jung LeeJoyti Prakash Kar Tae Il LeeDongwon Lee Dae-Kyu ChoiJoong-Hwee Cho Jae-Min Myoung |
| Affiliation: | a Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea b New Power Plasma Co. Ltd, 503-2 Shin-Dong, Yeongtong-Gu, Suwon-Si 443-390, Republic of Korea c Department of Multimedia-System Engineering, University of Incheon, 12-1 Songdo-Dong, Yeonsu-Gu, Incheon, Republic of Korea |
| Abstract: | Hydrogenated thin silicon nitride (SiNx:H) films were deposited by high frequency plasma enhanced chemical vapor deposition techniques at various NH3 and SiH4 gas flow ratios R = NH3/(SiH4 + NH3)], where the flow rate of NH3 was varied by keeping the constant flow (150 sccm) of SiH4. The deposition rate of the films was found to be 7.1, 7.3, 9 and 11 Å/s for the variation of R as 0.5, 0.67, 0.75 and 0.83, respectively. The films were optically and compositionally characterized by reflectance, photoluminescence, infrared absorption and X-ray photoelectron spectroscopy. The films were amorphous in nature and the refractive indices of the films were varied between 2.46 and 1.90 by changing the gas flow ratio during the deposition. The PL peak energy was increased and the linear band tails become broad with the increase in R. The incorporation of nitrogen takes place with the increase in R. |
| Keywords: | SiNx:H Chemical vapor deposition Gas flow ratio Optical and compositional properties |
| 本文献已被 ScienceDirect 等数据库收录！ | |