Structural effect on intrinsic stress in nanocrystalline Si:H films |
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Authors: | Wensheng Wei Jianling SuCongliang Zhang Liang ChuTianmin Wang |
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Affiliation: | a College of Physics & Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China b Company of Logistic Group, Wenzhou University, Wenzhou 325035, China c School of Science, Beihang University (BUAA), Beijing 100083, China |
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Abstract: | Intrinsic stress in nanocrystalline Si:H films which prepared by the plasma enhanced chemical vapor deposition (PECVD) technique, was illustrated as a compressive stress by means of Raman scattering and radius of curvature measurement. The Raman signals can be well fitted by a model of strain-calibrated phonon confinement, where the sole effect of phonon confinement and Fano interference on Raman scattering was excluded, respectively. The ion bombardment effect on the origination of intrinsic stress in the PECVD films was discussed. The formation of nc-Si:H was explained by etching model in present experimental parameters’ range. The results infer that the intrinsic compressive stress shows intensive correlation to amorphous Si:H, grain boundaries and hydrogen incorporation in the as-deposited materials. |
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Keywords: | Intrinsic compressive stress Nanocrystalline Si:H Phonon confinement Fano effect |
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