首页 | 本学科首页   官方微博 | 高级检索  
     


Design and simulation of a nanoelectronic single-electron universal Fredkin gate
Authors:Zardalidis   G.T. Karafyllidis   I.
Affiliation:Dept. of Electr. & Comput. Eng., Democritus Univ. of Thrace, Xanthi, Greece;
Abstract:A single-electron universal Fredkin gate (F-gate) is presented in this paper. Bits of information are represented by the presence or absence of single electrons at conducting islands. The logic operation of the F-gate as well as its AND, OR, and NOT operation is verified using simulation. The stability of its universal operation is analyzed using a Monte Carlo method. Stability analysis using free-energy diagrams and stability plots verified the correct and stable gate operation. The operation temperature of the single-electron Fredkin is expected to rise as dimensions of the circuit's conducting islands are reduced.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号