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Amplitude and phase modulation in a 4 μm-thick GaAs/AlGaAsmultiple quantum well modulator
Authors:Hsu  TY Yu  WY Efron  U
Affiliation:Hughes Res. Labs., Malibu, CA;
Abstract:The experimental results of a 4 μm-thick GaAs/AlGaAs MQW modulator show an ~10:1 on/off ratio with an applied voltage of 20 V (Δα~6×103/cm at E~50 kV/cm) and ~0.4 πrad of phase shift with an applied voltage of 10 V (Δn~0.04 at E~25 kV/cm). Such high electro-optical modulations have previously been reported only in MQW optical waveguide modulators
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