A power efficient differential 20-GHz low noise amplifier with 5.3-GHz 3-dB bandwidth |
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| Authors: | Xiaoling Guo O K.K. |
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| Affiliation: | Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Florida, Gainesville, FL, USA; |
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| Abstract: | A 20-GHz differential two-stage low-noise amplifier (LNA) is demonstrated in a foundry digital 130-nm CMOS technology with 8-metal layers. This LNA has 20-dB voltage gain and /spl sim/5.5-dB noise figure at 20GHz with 24-mW power consumption. The measured IP/sub 1 dB/ and IIP/sub 3/ are -11 dBm and -4dBm. Compared to the previously published bulk CMOS LNAs operating above 20GHz, this LNA has exceptionally low power and current consumption especially considering its differential topology and wide bandwidth. |
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