Structure investigation on Hg1−xCdxTe liquid phase epitaxial films grown by the meltetch technique

Hg_1−xCd_xTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscopy, scanning electron microscopy, and double crystal x-ray diffraction. It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious melt sticking.