| Zn2SiO4掺杂对氧化锌压敏电阻性能的影响 |
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| 引用本文： | 黄国贤,姜胜林,郭立,张光祖,翁俊梅.Zn2SiO4掺杂对氧化锌压敏电阻性能的影响[J].电子元件与材料,2011,30(9):24-26,35. |
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| 作者姓名： | 黄国贤 姜胜林 郭立 张光祖 翁俊梅 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北武汉,430074 |
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| 基金项目： | 科技型中小企业技术创新基金资助项目(No.09C26214201910) |
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| 摘 要： | 采用普通陶瓷工艺制备了Zn2SiO4掺杂的氧化锌压敏电阻,研究了Zn2SiO4掺杂量对氧化锌压敏电阻的致密度,晶粒微观结构,小电流性能和通流能力的影响.结果表明:当Zn2SiO4掺杂量达到0.75％(摩尔分数)时,氧化锌压敏电阻晶粒致密均匀；电学性能得到改善,压敏电压梯度和非线性系数分别高达438 V/mm和85,漏电...
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| 关 键 词： | 氧化锌压敏电阻 Zn2SiO4掺杂 晶粒 电学性能 |
Effects of Zn_2SiO_4 doping on the properties of zinc oxide varistors |
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| HUANG Guoxian,JIANG Shenglin,GUO Li,ZHANG Guangzu,WENG Junmei.Effects of Zn_2SiO_4 doping on the properties of zinc oxide varistors[J].Electronic Components & Materials,2011,30(9):24-26,35. |
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| Authors: | HUANG Guoxian JIANG Shenglin GUO Li ZHANG Guangzu WENG Junmei |
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| Affiliation: | HUANG Guoxian,JIANG Shenglin,GUO Li,ZHANG Guangzu,WENG Junmei(Department of Electronic Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China) |
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| Abstract: | Zinc oxide varistors doped with Zn2SiO4 were prepared by conventional ceramic technology.The effects of Zn2SiO4 doping amount on the density,grain microstructure,low current properties and surge absorption capability of zinc oxide varistors were studied.The results indicate that when the Zn2SiO4 doping amount is 0.75%(mole fraction),zinc oxide varistor with dense and uniform grain structure is obtained;the electrical properties of zinc oxide varistors are also improved,breakdown voltage gradient and nonline... |
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| Keywords: | zinc oxide varistors Zn2SiO4 doping grain electrical properties |
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