| 直流磁控溅射法制备YBCO超导薄膜研究 |
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| 引用本文： | 王道云,赵元黎.直流磁控溅射法制备YBCO超导薄膜研究[J].电子与封装,2011,11(9):34-37. |
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| 作者姓名： | 王道云 赵元黎 |
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| 作者单位： | 郑州大学物理工程学院,郑州,450001 |
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| 摘 要： | 文中采用直流磁控溅射法制备了YBCO超导薄膜，研究了镀膜过程中不同的气体总压、氧氩比、薄膜厚度以及退火温度对薄膜性质的影响，通过XRD分析，当总气压为40Pa、氧氩比为1：2、厚度为1μm、退火温度为800℃时，是薄膜生长的最佳条件。总气压过低，镀膜过程不能进行，气压过高，分子间自由程增加，溅射速率降低；氧氩比较低时，...
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| 关 键 词： | 直流磁控溅射 YBCO超导薄膜 XRD |
The Study of the YBCO Thin Film Which is Processed by Direct Current Sputtering |
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| WANG Dao-yun,ZHAO Yuan-li.The Study of the YBCO Thin Film Which is Processed by Direct Current Sputtering[J].Electronics & Packaging,2011,11(9):34-37. |
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| Authors: | WANG Dao-yun ZHAO Yuan-li |
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| Affiliation: | WANG Dao-yun,ZHAO Yuan-li(Physical Engineering School,Zhengzhou University,Zhengzhou 450001,China) |
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| Abstract: | YBCO superconducting thin film is processed by direct current sputtering in this paper.We have researched the nature of the thin film by the different gas pressure,oxygen argon ratios,film thickness and annealing temperature,and got the best coating film conditions by XRD analysis.Total pressure is too low,coating process cannot undertake,total pressure is exorbitant,mean free path reduced and sputtering rate increased;oxygen argon ratios is too low,then oxygen ion less,sputtering process cannot undertake,o... |
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| Keywords: | direct current sputtering YBCO superconducting thin film XRD |
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