| 铌酸锂晶片的键合减薄及热释电性能研究 |
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| 引用本文： | 杨绪军,陈箫,刘岗,牛坤旺,张文栋. 铌酸锂晶片的键合减薄及热释电性能研究[J]. 电子元件与材料, 2011, 30(10): 31-34 |
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| 作者姓名： | 杨绪军 陈箫 刘岗 牛坤旺 张文栋 |
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| 作者单位： | 1. 中北大学电子测试技术国防科技重点实验室,山西太原,030051
2. 中北大学信息与通信工程学院,山西太原,030051 |
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| 基金项目： | 国家“863”计划重大资助项目(No.2006AA040101) |
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| 摘 要： | 铌酸锂(LN)作为一种热释电材料,可以被用于制作光电探测器敏感单元的敏感层,但通常LN晶片厚度为0.5 mm,远大于光电敏感单元厚度的要求,所以需要用键合减薄及抛光技术对LN晶片进行加工处理。本研究所用键合减薄技术主要包含:RZJ-304光刻胶键合、铣磨、抛光、剥离液剥离和丙酮清洗RZJ-304胶。利用该技术加工得到了面积为10 mm×10 mm,厚度为50μm,表面比较光滑,表面粗糙度为1.63 nm的LN晶片。LN晶片的热释电信号峰峰值在减薄抛光后为176 mV,是未经处理时的4倍,满足了热释电探测器敏感层的要求。
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| 关 键 词： | LN晶片 键合 减薄 抛光 热释电性能 |
Study on the pyroelectric properties of lithium niobate wafer prepared by wafer bonding and thinning |
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| YANG Xujun,CHEN Xiao,LIU Gang,NIU Kunwang,ZHANG Wendong. Study on the pyroelectric properties of lithium niobate wafer prepared by wafer bonding and thinning[J]. Electronic Components & Materials, 2011, 30(10): 31-34 |
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| Authors: | YANG Xujun CHEN Xiao LIU Gang NIU Kunwang ZHANG Wendong |
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| Affiliation: | YANG Xujun1,CHEN Xiao2,LIU Gang1,NIU Kunwang1,ZHANG Wendong1(1.Electronic Measurement Technology National Defense Technology Key Laboratory,North University of China,Taiyuan 030051,China,2.School of Information and Communication Engineering,China) |
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| Abstract: | Pyroelectric material lithium niobate(LN) can be used for the preparation of sensitive layer in the sensitive element of photoelectric detector.However,as the thickness of normal LN wafer,which is 0.5 mm,is much larger than the thickness of sensitive element,LN wafer need to be processed using the thinning and polishing techniques.A novel wafer bonding and thinning technique was introduced in this study,and it mainly included: wafer bonding with RZJ-304 photoresist,grinding,polishing,separating wafers with ... |
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| Keywords: | LN wafer bonding thinning polishing pyroelectric properties |
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