Amorphous silicon/silicon carbide superlattice avalanchephotodiodes |
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| Authors: | Jwo S.-C. Wu M.-T. Chen J.-K. Hong J.-W. Chang C.-Y. |
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| Affiliation: | Semiconductor & Syst. Lab., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | An a-Si/SiC:H superlattice avalanche photodiode (SAPD) has been successfully fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition. The room-temperature electron and hole impact ionization rates, α and β, have been determined for the a-Si/SiC:H superlattice structure by photocurrent multiplication measurements. The ratio α/β is 6.5 at a maximum electric field of 2.08×105 V/cm. Avalanche multiplications in the superlattice layer yields an optical gain of 184 at a reverse bias VR=20 V and an incident light power Pin=5 μW. An LED-SAPD photocouple exhibited a switching time of 4.5 μs at a load resistance R-1.8 kΩ |
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