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Reduction in Self-Heating Effect of SOI MOSFETs by Three Vertical 4H-SiC Layers in the BOX |
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| Authors: | Tahne Behrooz Abdi Naderi Ali Heirani Fatemeh |
| Affiliation: | 1.Advanced Skills Center, University of Applied Science and Technology, Kermanshah, Iran ;2.Electrical Engineering Department, Energy Faculty, Kermanshah University of Technology, Kermanshah, Iran ; |
| Abstract: | Silicon - In this paper a novel structure is proposed for silicon on insulator MOSFETs which improves DC and RF characteristics by three vertical layers of 4H-SiC. Vertical layers are in parallel... |
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