Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers |
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| Authors: | MJ Zarabi M Satyam |
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| Affiliation: | 1. Electronics Commission (IPAG), Delhi, India;2. Electrical Communication Engineering Department, Indian Institute of Science, Bangalore-12, India |
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| Abstract: | The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generated carriers into account. The current density distributions computed under different conditions have been given. The light emission and other characteristics reported by Chiang and Lauritzen and others have been explained. |
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