Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment |
| |
| Authors: | K. Saminadayar J.C. Pfister |
| |
| Affiliation: | Centre d''Etudes Nucléaires de Grenoble, Département de Recherche Fondamentale, Section de Physique du Solide, 85 X, 38041, Grenoble Cédex, France |
| |
| Abstract: | Evolution of Si/SiO2 surface state density during a negative bias temperature treatment is reported. Two kinds of surface state are observed and their evolution is studied with the oxidation conditions, the type of the substrate and a preliminary electronic irradiation as parameters. A qualitative model is proposed to explain the observed results. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
